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Alcohol use by patients in day-treatment programs: a follow-up study. The purposes of this study were to describe the alcohol consumption of day-treatment patients; to examine the stability of alcohol use over time; and to determine the relationships of alcohol use and sociodemographic characteristics with length of stay in a day-treatment program. A total of 224 day-treatment patients were followed up over a 12-month period with 6 monthly interviews. Of the patients, 31% admitted to drinking in the month prior to treatment; 59% were abstinent, and 10% had at least one drinking episode. All patients who drank showed moderate levels of drinking. The percentage of the patients in treatment who reported drinking over the past month and previous year showed little change over the follow-up period. Length of stay was negatively associated with the number of drinks per week. The results indicate that a significant proportion of day-treatment patients engage in heavy episodic drinking and, over a 12-month period, evidence little change in drinking patterns. The length of stay in the program is associated with the number of drinks per week.The present invention relates to an improved semiconductor device and a method of manufacturing the same and more particularly to a high-electron-mobility transistor (hereafter referred to as HEMT) capable of exhibiting a high operating speed and a low operating voltage. In order to realize a high-speed, high-power and high-frequency power amplifier using a field effect transistor (hereafter referred to as FET), the FET must be operated at a higher speed. In order to realize a high-speed, high-power and high-frequency power amplifier using a HEMT, it is necessary to increase the electron mobility. Generally, a HEMT is made of an In.sub.x Ga.sub.1-x As (x=0.1 or 0.2) material. This material has the highest electron mobility among semiconductor materials. The FET using this HEMT is characterized by a high electron mobility and therefore has a high operating speed. A semiconductor device which has a HEMT is disclosed in a technical report of the Institute of Electronics, Information and Communication Engineers, Vol. J67-C-5, No. 2, pp. 62-67, February 1984. This device is fabricated in the following manner. An undoped GaAs layer is epitaxially grown on an undoped In.sub.x Ga.sub






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